Ion Implantation and Thermal Annealing in Silicon Carbide and Gallium Nitride

Abstract Ion-beam-induced disordering in single crystals of 6H–SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au 2+ -irradiated 6H–SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

[1]  S. Thevuthasan,et al.  Deuterium channeling analysis for He+-implanted 6H–SiC , 2000 .

[2]  Elke Wendler,et al.  Ion-beam induced damage and annealing behaviour in SiC , 1998 .

[3]  W. Bolse.  Formation and development of disordered networks in Si-based ceramics under ion bombardment , 1998 .

[4]  S. Thevuthasan,et al.  DISPLACEMENT ENERGY MEASUREMENTS FOR ION-IRRADIATED 6H-SIC , 1999 .

[5]  N. Yu,et al.  Irradiation-induced amorphization in β-SiC , 1998 .

[6]  William J. Weber,et al.  Displacement threshold energies in β-SiC , 1998 .

[7]  William J. Weber,et al.  Models and mechanisms of irradiation-induced amorphization in ceramics , 2000 .

[8]  B. Rauschenbach,et al.  Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN , 1999 .

[9]  J. Lindner.  Radiation damage of 2 MeV Si ions in Si0.75Ge0.25: optical measurements and damage modelling , 1996 .

[10]  W. Weber,et al.  Structure and properties of ion-beam-modified (6H) silicon carbide , 1998 .

[11]  B. Mensching,et al.  Characterization of Ca and C implanted GaN , 1997 .

[12]  W. J. Weber,et al.  Computer simulation of a 10 keV Si displacement cascade in SiC , 1998 .

[13]  W. J. Weber,et al.  Damage accumulation and annealing in 6H–SiC irradiated with Si+ , 1998 .

[14]  Wolfgang Skorupa,et al.  Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation , 1995 .

[15]  S. Kucheyev,et al.  The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN , 2001 .

[16]  William J. Weber,et al.  Displacement energy surface in 3C and 6H SiC , 2000 .

[17]  W. J. Weber,et al.  Defect annealing kinetics in irradiated 6H–SiC , 2000 .

[18]  S. Pearton,et al.  Strong surface disorder and loss of N produced by ion bombardment of GaN , 2000 .

[19]  B. Mensching,et al.  Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization , 1998 .

[20]  S. Pearton,et al.  Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment , 2000 .

[21]  E. Alves,et al.  Annealing behavior and lattice site location of Hf implanted GaN , 1999 .

[22]  W. J. Weber,et al.  In-situ Ion Channeling Study of Gallium Disorder and Gold Profiles in Au-implanted GaN , 2000 .