IHP SiGe:C BiCMOS technologies as a suitable backup solution for the ATLAS upgrade Front-End electronics

In this study we present the results of the radiation hardness studies performed on three different SiGe:C BiCMOS technologies from Innovation for High Performance Microelectronics (IHP) for their application in the Super-Large Hadron Collider (S-LHC). We performed gamma, neutron and proton irradiations on the bipolar module of the technologies, in order to consider all radiation damage mechanisms on the electronic devices. The results show that transistors from the IHP BiCMOS technologies remain functional after the radiation levels expected in the S-LHC. These technologies are one of the candidates to constitute the analog part of the Front-End chip in the ATLAS-upgrade experiment, inside the S-LHC.

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