Approaches to high performance SITL

In order to improve speed performance, the normally configured bipolar mode SIT (BSIT) is introduced to SITL with a new circuit configuration where output Schottky diodes are fabricated to ensure the decoupling between multiple outputs.. The performance of this Schottky SITL is evaluated in the ring oscillator having three fanouts for each state, where the propagation decay is obtained as 2.5 ns with a power dissipation of 100 /spl mu/W.