Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors
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H.C. Yen | D. Sawdai | W. Okamura | E. Kaneshiro | A. Gutierrez-Aitken | T. Quach | T. Jenkins | L. Kehias | R. Welch | R. Worley | D. Sawdai | A. Gutierrez-Aitken | H. Yen | P. Watson | T. Quach | E. Kaneshiro | R. Worley | R. Welch | T. Jenkins | L. Kehias | P. Watson | W. Okamura
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