论文信息 - An InAs channel heterojunction field-effect transistor with high transconductance

An InAs channel heterojunction field-effect transistor with high transconductance

A report is presented on an InAs channel field-effect transistor (FET) based on AlGaSb/InAs/AlSb/AlGaSb structures grown by molecular-beam epitaxy. Excellent pinch-off characteristics have been obtained. An FET with a gate length of 1.7 mu m showed transconductances ranging from 460 mS/mm (at V/sub ds/=0.5 V) to 509 mS/mm (at V/sub ds/=1 V) and a K factor of 1450 mS/Vmm (at V/sub ds/=1 V) at room temperature.<<ETX>>

[1] D. Delagebeaudeuf,et al. Two-dimensional electron gas m.e.s.f.e.t. structure , 1980 .

[2] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .

[3] Herbert Kroemer,et al. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface , 1990 .

[4] W. I. Wang,et al. Heterojunction field‐effect transistors based on AlGaSb/InAs , 1989 .

[5] K. Kato,et al. Analysis of Kink Characteristics in Silicon-on-Insulator MOSFET's Using Two-Carrier Modeling , 1985, IEEE Journal of Solid-State Circuits.

[6] U. Mishra,et al. High-performance submicrometer AlInAs-GaInAs HEMT's , 1988, IEEE Electron Device Letters.

[7] W. Kopp,et al. Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs , 1985 .

[8] M. W. Pierce,et al. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length , 1988, IEEE Electron Device Letters.