Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3

Avalanche multiplication and excess noise have been measured on a series of Al/sub x/Ga/sub 1-x/As-GaAs and GaAs-Al/sub x/Ga/sub 1-x/As (x=0.3,0.45, and 0.6) single heterojunction p/sup +/-i-n/sup +/ diodes. In some devices excess noise is lower than in equivalent homojunction devices with avalanche regions composed of either of the constituent materials, the heterojunction with x=0.3 showing the greatest improvement. Excess noise deteriorates with higher values of x because of the associated increase in hole ionization in the Al/sub x/Ga/sub 1-x/As layer. It also depends critically upon the carrier injection conditions and Monte Carlo simulations show that this dependence results from the variation in the degree of noisy feedback processes on the position of the injected carriers.

[1]  W. C. Johnson,et al.  Use of a Schottky barrier to measure impact ionization coefficients in semiconductors , 1973 .

[2]  Bahaa E. A. Saleh,et al.  Optimal excess noise reduction in thin heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes , 2003 .

[3]  R. C. Tozer,et al.  Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes , 2001 .

[4]  P. Bhattacharya,et al.  Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices , 1985 .

[5]  John P. R. David,et al.  Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers , 1995 .

[6]  M. Teich,et al.  Effect of stochastic dead space on noise in avalanche photodiodes , 2004, IEEE Transactions on Electron Devices.

[7]  J. David,et al.  Ionization coefficients in AlxGa1-xAs (x = 0 - 0.60) , 2000 .

[8]  P. Bhattacharya,et al.  Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems , 1991 .

[9]  C. Chia,et al.  Impact ionization in AlxGa1−xAs/GaAs single heterostructures , 1998 .

[10]  J.C. Campbell,et al.  Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates , 2002, IEEE Photonics Technology Letters.

[11]  New high speed long wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes , 1985, 1985 International Electron Devices Meeting.

[12]  Federico Capasso,et al.  Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio , 1982 .

[13]  P. N. Robson,et al.  Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes , 2000 .

[14]  M. Hopkinson,et al.  The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes , 2003 .

[15]  X. Li,et al.  Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region , 2001, IEEE Photonics Technology Letters.

[16]  R. Mcintyre.  Multiplication noise in uniform avalanche diodes , 1966 .

[17]  R. B. Franks.  Dependence of ionization coefficients on well and barrier widths for GaAs/AlGaAs multiple quantum wells , 1990 .

[18]  A. Holmes,et al.  Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions , 2002 .

[19]  J. David,et al.  Avalanche speed in thin avalanche photodiodes , 2003 .

[20]  John P. R. David,et al.  Electron multiplication in AlxGa1−xAs/GaAs heterostructures , 1997 .

[21]  Joe C. Campbell,et al.  Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region , 2003 .

[22]  R. J. McIntyre,et al.  A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response , 1999 .

[23]  G. Stillman,et al.  The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements , 1985, IEEE Transactions on Electron Devices.

[24]  Ping Yuan,et al.  Avalanche photodiodes with an impact-ionization-engineered multiplication region , 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

[25]  George David Pettit,et al.  Some optical properties of the AlxGa1−xAs alloys system , 1976 .

[26]  G. Bosman,et al.  Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements , 1987 .

[27]  Osamu Mikami,et al.  Impact ionization rates in an InGaAs/InAlAs superlattice , 1989 .

[28]  Karl Hess,et al.  Impact ionisation in multilayered heterojunction structures , 1980 .

[29]  G. Stillman,et al.  The determination of impact ionization coefficients in , 1985 .

[30]  Chee Hing Tan,et al.  Low Multiplication Noise Thin Avalanche Photodiodes , 2001 .

[31]  Electron and hole impact ionization rates in InP/Ga 0.47 In 0.53 As superlattice , 1986 .

[32]  T. Pearsall.  Impact ionization in AlxGa1−xAs/GaAs superlattices , 1998 .

[33]  J. David,et al.  A simple model for avalanche multiplication including deadspace effects , 1999 .

[34]  Jeremy Allam,et al.  Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes , 1990 .

[35]  J. David,et al.  The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures , 1989, IEEE Electron Device Letters.

[36]  J. David,et al.  Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes , 2004 .

[37]  R. C. Tozer,et al.  Treatment of soft threshold in impact ionization , 2001 .