Switching characteristic of Si-IEGTs and SiC-PiN diodes pair connected in series

In this paper, in order to realize high voltage static switches of voltage source inverters in high power applications, two series connected 4.5kV rate Si-IEGT with SiC-PiN diode pairs (hybrid combination) are considered with hard switching method. The switching test of power module that is hybrid combination is carried out under 5kV DC bias voltage. The gate driver circuit is designed by high output power capacity for high speed hard switching. Small reverse recovery charge of SiC-PiN diode and the hard switching method are adopted for the purpose of not only high switching frequency but also high power density in the high power converter system. Experimental results show good switching characteristic of voltage balancing with small size capacitor and balance resistors at the switching period.

[1]  T. Ogura,et al.  A study on switching frequency limitation of high voltage power converters in combination of Si-IEGT and SiC-PiN diode , 2006, Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06..

[2]  K. Matsuse,et al.  Voltage balancing method for IGBTs connected in series , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[3]  Bin Chen,et al.  Development of a scalable power semiconductor switch (SPSS) , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..

[4]  David A. Torrey,et al.  Series connection of IGBT's with active voltage balancing , 1999 .

[5]  P. K. Steimer,et al.  Comparison of high power IGBTs and hard driven GTOs for high power inverters , 1998, APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition.

[6]  L. Fratelli,et al.  Series connection of IGBTs in hard-switching applications , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[7]  K. Matsuse,et al.  Voltage balancing method for IGBTs connected in series , 2002 .

[8]  Dong-Sheng Zhou,et al.  A practical series connection technique for multiple IGBT devices , 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

[9]  Fei Wang,et al.  Development of a Scalable Power Semiconductor Switch (SPSS) , 2007, IEEE Transactions on Power Electronics.

[10]  H. Kon,et al.  The 4500 V-750 A planar gate press pack IEGT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).