论文信息 - Anisotropic transport properties of InBi

Anisotropic transport properties of InBi

The temperature dependences of the two principal elements ϱ⟂ (or ϱ11) and ϱ∥ (or ϱ33) of the electrical resistivity tensor (from 3 to 350 K) and the absolute Seebeck coefficients S⟂ (or S11) and S∥(or S33) (from 77 to 350 K) for indium-bismuth (InBi) are reported. ϱ⟂ is found to follow a T1.3dependence while ϱ∥ follows a linear dependence on T. The 300 K Seebeck tensor elements are anisotropic (positive and negative) with S⟂ = (−8.7 ± 0.3) μV/K and S∥ = (11 ± 1) μV/K. This anisotropy helps explain some of the divergent values of S.

R. Lal | H. Walter | J. Davis

[1] T. Mizushima,et al. Transverse Magnetoresistance and Shubnikov-de Haas Effect in Intermetallic Compounds InBi and In2Bi , 1982 .

[2] T. Okada,et al. Electronic Properties of Liquid In–Se Alloys , 1975 .

[3] T. White,et al. Thermal expansion and Grüneisen parameters of InBi , 1975 .

[4] J. Hofmans,et al. The de Haas-van Alphen effect in InBi , 1974 .

[5] K. Takano,et al. Thermal expansion of InBi , 1973 .

[6] H. Walter. Growth of InBi single crystals , 1973 .

[7] J. M. Farley,et al. The elastic behaviour of InBi single crystals , 1973 .

[8] R. Lal,et al. The effect of thermal cycling on the resistance and morphology of InBi single crystals and polycrystals , 1972 .

[9] V. A. Presnov,et al. The electrophysical properties of InBi , 1967 .

[10] S. Williamson,et al. Quantum Oscillations in the Ultrasonic Attenuation and Magnetic Susceptibility of InBi , 1966 .

[11] G. S. Cooper,et al. The electrical resistivity and thermoelectric power of InBi and In2Bi , 1964 .

[12] P. Kendall,et al. RESEARCH NOTES The Absolute Scale of Thermoelectric Power at High Temperature , 1958 .

[13] K. Hashimoto. Electrical Properties of SnTe, SnSe and InBi at Low Temperatures , 1957 .

[14] W. P. Binnie. The structural crystallography of indium bismuthide , 1956 .