Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirradiated controls. For parts aged by repetitive Program/Erase (P/E) cycling, the effect of radiation was not statistically significant.

[1]  Jian Chen,et al.  Reliability of Flash Nonvolatile Memories , 2001 .

[2]  G. Sery,et al.  Physical origin of long-term charge loss in floating-gate EPROM with an interpoly oxide-nitride-oxide stacked dielectric , 1991, IEEE Electron Device Letters.

[3]  R. Shirota,et al.  Extended data retention process technology for highly reliable flash EEPROMs of 10/sup 6/ to 10/sup 7/ W/E cycles , 1998, 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173).

[4]  Richard W. Hamming,et al.  Error detecting and error correcting codes , 1950 .

[5]  M. Friendlich,et al.  Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory , 2009, IEEE Transactions on Nuclear Science.

[6]  F. Arai,et al.  Extended data retention process technology for highly reliable flash EEPROMs of 106 to 107 W/E cycles , 1998 .

[7]  Andreas Schenk,et al.  Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling , 1995 .

[8]  M. Friendlich,et al.  Development of a Low-Cost and High-speed Single Event Effects Testers based on Reconfigurable Field Programmable Gate Arrays (FPGA) , 2006 .

[9]  Alessandro Paccagnella,et al.  Ionizing radiation induced leakage current on ultra-thin gate oxides , 1997 .

[10]  R. E. Shiner,et al.  A new reliability model for post-cycling charge retention of flash memories , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[11]  H. E. Boesch,et al.  Reversibility of trapped hole annealing , 1988 .

[12]  D. James.  Nano-Scale Flash in the Mid-Decade , 2007, 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

[13]  Robert J. McEliece,et al.  The reliability of computer memories , 1985 .

[14]  Andrea L. Lacaita,et al.  A statistical model for SILC in flash memories , 2002 .

[15]  Richard Stevens Burington,et al.  Handbook of Probability and Statistics, with Tables , 1954 .

[16]  H. E. Boesch,et al.  The nature of the trapped hole annealing process , 1989 .

[17]  A. Lelis,et al.  Time dependence of switching oxide traps , 1994 .

[18]  G. Reimbold,et al.  Experimental and theoretical investigation of nonvolatile memory data-retention , 1999 .