Electrical Modeling of Long-Wavelength VCSELs for Intrinsic Parameters Extraction
暂无分享,去创建一个
A. Rissons | V. Iakovlev | E. Kapon | A. Hayat | A. Syrbu | A. Bacou | A. Syrbu | E. Kapon | V. Iakovlev | J. Mollier | J.-C. Mollier | A. Rissons | A. Hayat | A. Bacou
[1] Jean-Pierre Leburton,et al. Auger recombination in long-wavelength strained-layer quantum-well structures , 1995 .
[2] VCSEL Intrinsic Response Extraction Using , 2009 .
[3] Ivan P. Kaminow,et al. High-frequency characteristics of directly modulated InGaAsP ridge waveguide and buried heterostructure lasers , 1984 .
[4] J. Nishizawa,et al. Impedance characteristics of double-hetero structure laser diodes , 1979 .
[5] Andrei Caliman,et al. VCSELs emitting in the 1310-nm waveband for novel optical communication applications , 2005, SPIE OPTO.
[6] Julien Perchoux,et al. Multimode VCSEL model for wide frequency-range RIN simulation , 2008 .
[7] Amnon Yariv,et al. Noise equivalent circuit of a semiconductor laser diode , 1982 .
[8] J. Boucart,et al. 3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications , 2006, IEEE Photonics Technology Letters.
[9] G. Boeck,et al. Direct parameter-extraction method for laser diode rate-equation model , 2004, Journal of Lightwave Technology.
[10] Wafer-fused 1550-nm band VCSELs with fundamental mode output exceeding 6 mW , 2008, 2008 34th European Conference on Optical Communication.
[11] A. Larsson,et al. High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3- $\mu\hbox{m}$ InGaAs Single-Mode VCSELs , 2007, Journal of Lightwave Technology.
[12] Ian H. White,et al. 1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study , 2002 .
[13] W. Hofmann,et al. 10-Gb/s data transmission using BCB passivated 1.55-/spl mu/m InGaAlAs-InP VCSELs , 2006, IEEE Photonics Technology Letters.
[14] L. Coldren,et al. Design of index-guided vertical-cavity lasers for low temperature-sensitivity, sub-milliamp thresholds, and single-mode operation , 1995 .
[15] Winston I. Way,et al. Large signal nonlinear distortion prediction for a single-mode laser diode under microwave intensity modulation , 1987 .
[16] Jay B. Kirk,et al. Design and Characterization of 1 . 3-m AlGaInAs – InP Multiple-Quantum-Well Lasers , 2001 .
[17] A. Syrbu,et al. High Single Mode Power Wafer Fused InAlGaAs/InP -AlGaAs/GaAs VCSELs Emitting in the 1.3-1.6μm Wavelength Range , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
[18] H. Li,et al. Vertical-cavity surface-emitting laser devices , 2003 .
[19] R. Collin. Foundations for microwave engineering , 1966 .
[20] A Syrbu,et al. 10 Gbps VCSELs with High Single Mode Output in 1310nm and 1550 nm Wavelength Bands , 2008, OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference.
[21] Rainer Michalzik,et al. Design and analysis of single-mode oxidized VCSELs for high-speed optical interconnects , 1999 .
[22] Jerome K. Butler,et al. Design and characterization of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers , 2001 .
[23] RodneyS. Tucker,et al. Large-signal circuit model for simulation of injection-laser modulation dynamics , 1981 .
[24] D. J. Pope,et al. Microwave Circuit Models of Semiconductor Injection Lasers , 1982 .
[25] Seoung-Hwan Park,et al. Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers , 1999 .
[26] E. Kapon,et al. Threshold analysis of vertical-cavity surface-emitting lasers with intracavity contacts , 2006, IEEE Journal of Quantum Electronics.
[27] A. Kasukawa,et al. Compressively strained 1.3 mu m InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems , 1993 .
[28] E. S. Bjorlin,et al. Temperature dependence of the relaxation resonance frequency of long-wavelength vertical-cavity lasers , 2005, IEEE Photonics Technology Letters.
[29] Sung-Mo Kang,et al. A comprehensive circuit-level model of vertical-cavity surface-emitting lasers , 1999 .
[30] A. Syrbu,et al. High-performance single-mode VCSELs in the 1310-nm waveband , 2005, IEEE Photonics Technology Letters.
[31] Amnon Yariv,et al. The intrinsic electrical equivalent circuit of a laser diode , 1981 .
[32] Richard A. Soref,et al. Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .
[33] M. Majewski,et al. A Critical Comparison of High-Speed VCSEL Characterization Techniques , 2007, Journal of Lightwave Technology.
[34] J. Mollier,et al. Noise equivalent circuit of a two-mode semiconductor laser with the contribution of both the linear and the nonlinear gain , 1997 .
[35] Pierpaolo Boffi,et al. High speed 1.3 mm VCSELs for 12.5 Gbit/s optical interconnects , 2008 .