Reduction in the series resistance of the distributed Bragg reflector in vertical cavities by using quasi‐graded superlattices at the heterointerfaces

Surface emitting optical devices with a vertical cavity have been investigated for applications in optical interconnections. To integrate these devices into a two‐dimensional array, it is necessary to improve the conversion efficiency from electrical power to optical power. To meet this requirement, the series resistance of the distributed Bragg reflectors that form the vertical cavity must be reduced. This article demonstrates the reduction in the series resistance of the distributed Bragg reflector by introducing quasi‐graded superlattices at the heterointerfaces. By using this structure, we obtain a low series resistance distributed Bragg reflector without compromising the high reflectivity. The mechanism of the reduction in the series resistance is studied and it is found that an increase in tunneling current leads to a decrease in the resistance. The dependence of tunneling current on doping concentration of the distributed Bragg reflector and the superlattice structure is also discussed.

[1]  L. Coldren,et al.  Low threshold planarized vertical-cavity surface-emitting lasers , 1990, IEEE Photonics Technology Letters.

[2]  T. G. Dziura,et al.  5 GHz modulation of a mushroom mesa surface emitting laser , 1991 .

[3]  J. Chyi,et al.  Resonant cavity-enhanced (RCE) photodetectors , 1991 .

[4]  John F. Klem,et al.  Reflectance modulator based on tandem Fabry-Perot resonators , 1991 .

[5]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[6]  Yeong-Her Wang,et al.  Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers , 1990 .

[7]  Ichiro Ogura,et al.  Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity , 1991 .

[8]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[9]  Ichiro Ogura,et al.  Surface‐emitting laser operation in vertical‐to‐surface transmission electrophotonic devices with a vertical cavity , 1991 .

[10]  S. Takahashi,et al.  Time domain measurements of launching-condition-dependent bandwidth of all-plastic optical fibres , 1991 .

[11]  Larry A. Coldren,et al.  Submilliamp threshold vertical‐cavity laser diodes , 1990 .

[12]  G. R. Olbright,et al.  Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes , 1991 .

[13]  Larry A. Coldren,et al.  Low threshold, high power, vertical-cavity surface-emitting lasers , 1991 .

[14]  James S. Harris,et al.  Electroabsorptive modulators in InGaAs/AlGaAs , 1991 .

[15]  Larry A. Coldren,et al.  Analysis and design of surface-normal Fabry-Perot electrooptic modulators , 1989 .

[16]  Kenichi Kasahara,et al.  Detector Characteristics of a Vertical-Cavity Surface-Emitting Laser , 1991 .

[17]  J. P. Harbison,et al.  Optically controlled surface‐emitting lasers , 1991 .

[18]  K. Kasahara,et al.  Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors , 1992 .

[19]  A. Scherer,et al.  Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization , 1991 .

[20]  K. Iga,et al.  GaInAsP/InP Surface Emitting Injection Lasers , 1979 .