Electron transport in InAs nanowires and heterostructure nanowire devices

Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (<30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states. (C) 2004 Elsevier Ltd. All rights reserved. (Less)

[1]  Lars Samuelson,et al.  Nanowire resonant tunneling diodes , 2002 .

[2]  C. Dekker,et al.  Logic Circuits with Carbon Nanotube Transistors , 2001, Science.

[3]  Lars Samuelson,et al.  Single-electron transistors in heterostructure nanowires. , 2003 .

[4]  Lloyd J. Whitman,et al.  Chemical and electronic properties of sulfur-passivated InAs surfaces , 2003 .

[5]  Lars Samuelson,et al.  Gold Nanoparticles: Production, Reshaping, and Thermal Charging , 1999 .

[6]  Kenji Hiruma,et al.  GaAs p‐n junction formed in quantum wire crystals , 1992 .

[7]  Lars Samuelson,et al.  One-dimensional heterostructures in semiconductor nanowhiskers , 2002 .

[8]  C. Thelander,et al.  Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures , 2002 .

[9]  Lars Samuelson,et al.  Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth , 2003 .

[10]  Charles M. Lieber,et al.  Logic Gates and Computation from Assembled Nanowire Building Blocks , 2001, Science.

[11]  H. L. Stormer,et al.  Four-terminal resistance of a ballistic quantum wire , 2001, Nature.

[12]  Lars Samuelson,et al.  Size-, shape-, and position-controlled GaAs nano-whiskers , 2001 .

[13]  Lars Samuelson,et al.  Self-forming nanoscale devices , 2003 .

[14]  Charles M. Lieber,et al.  Functional nanoscale electronic devices assembled using silicon nanowire building blocks. , 2001, Science.

[15]  Lars Samuelson,et al.  One-dimensional steeplechase for electrons realized , 2002 .

[16]  Liberato Manna,et al.  Controlled growth of tetrapod-branched inorganic nanocrystals , 2003, Nature materials.