Quantum dot structures grown on Al containing quaternary material for infrared photodetection beyond 10μm

Different InAs quantum dot structures grown on InGaAlAs lattice matched to InP were investigated for quantum dot infrared photodetectors. Extremely narrow photocurrent peaks were observed, demonstrating great potential for fine wavelength selection. Structures which can detect radiation beyond 10μm were developed. Polarization dependence measurements showed that the structures have a zero-dimensional character and are suitable for detection of normal incident light. On the other hand, structures containing coupled quantum wells showed a hybrid two-dimensional/zero-dimensional behavior.

[1]  Antoni Rogalski,et al.  Competitive technologies of third generation infrared photon detectors , 2006 .

[2]  Meimei Z. Tidrow,et al.  Device physics and state-of-the-art of quantum well infrared photodetectors and arrays , 2000 .

[3]  C. Jagadish,et al.  Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  Tomas Bryllert,et al.  InAs quantum dots grown on InAlGaAs lattice matched to InP , 2003 .

[5]  G. Bastard,et al.  Intraband transitions in quantum dot–superlattice heterostructures , 2005 .

[6]  Pallab Bhattacharya,et al.  High-performance mid-infrared quantum dot infrared photodetectors , 2005 .

[7]  Vladimir Mitin,et al.  Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors , 2004 .

[8]  Michel Gendry,et al.  Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K , 2001 .

[9]  Wei Zhang,et al.  High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition , 2005 .

[10]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[11]  S. Fafard.  Quantum dot structures and devices with sharp adjustable electronic shells , 2000 .

[12]  E. Towe,et al.  Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[13]  H. Liu,et al.  Quantum dot infrared photodetectors , 2003 .

[14]  Euijoon Yoon,et al.  Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties , 2003, SPIE OPTO.

[15]  Wei Zhang,et al.  Quantum dot infrared photodetectors: Comparison of experiment and theory , 2005 .