2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC

The widespread deployment of high-data-rate wireless connectivity was enabled by the adoption of the WiGig (802.11ad) standard, consequently placing a challenge on integrated Power Amplifiers (PAs). To comply with system requirements, the PA must cover bands from 57 to 66GHz and deliver up to 10dBm RF modulated power, while OFDM modulations up to 16 or 64QAM are supported, implying a large Peak-to-Average Power Ratio (PAPR).

[1]  O. Degani,et al.  Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE , 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[2]  Baudouin Martineau,et al.  A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI , 2009, 2009 Proceedings of ESSCIRC.

[3]  Ali M. Niknejad,et al.  A digitally modulated mm-Wave cartesian beamforming transmitter with quadrature spatial combining , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[4]  Patrick Reynaert,et al.  14.3 A Push-Pull mm-Wave power amplifier with <0.8° AM-PM distortion in 40nm CMOS , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

[5]  Baudouin Martineau,et al.  A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI , 2010, IEEE Journal of Solid-State Circuits.

[6]  Ercan Kaymaksut.  CMOS Transformer-Based Doherty Power Amplifiers , 2014 .

[7]  Patrick Reynaert,et al.  A 60-GHz Outphasing Transmitter in 40-nm CMOS , 2012, IEEE Journal of Solid-State Circuits.

[8]  Patrick Reynaert,et al.  A 60-GHz Dual-Mode Class AB Power Amplifier in 40-nm CMOS , 2013, IEEE Journal of Solid-State Circuits.