论文信息 - Temperature Distribution in InGaN-MQW LEDs under Operation - 字舞流文

Temperature Distribution in InGaN-MQW LEDs under Operation

W. Limmer | Markus Kamp | M. Seyboth | Rolf Sauer | M. Scherer | C. Kirchner | V. Schwegler | Sven Schad | Ulrich Stempfle

[1] Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy , 1999 .

[2] A. É. Yunovich,et al. Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells , 1997 .

[3] R. Sauer,et al. Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN , 1999 .

[4] L. Sugiura,et al. Dislocation motion in GaN light-emitting devices and its effect on device lifetime , 1997 .