Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by using our in-house developed finite difference algorithm, which is validated by comparing the simulated temperature distribution with its counterpart obtained by commercial software. Both crossbar RRAM array and vertical RRAM array are studied comprehensively with careful consideration of the temperature-dependent constitute parameters. Simulations show that the temperature and thermal crosstalk are sensitive to the size and shape of conductive filament, which can further limit the scaling potential of RRAM array through affecting its reliability, such as retention time, current leakage, and so on. Scaling behavior of 3-D RRAM array is studied, and optimization guidance for reducing thermal crosstalk is proposed. The fabrication inaccuracy resulted cell offset has also been examined for investigation of thermal crosstalk.

[1]  Armando Rúa,et al.  Insulator-to-metal phase transition and recovery processes in V O 2 thin films after femtosecond laser excitation , 2007 .

[2]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[3]  Daniele Ielmini,et al.  Filament diffusion model for simulating reset and retention processes in RRAM , 2011 .

[4]  Kuk-Hwan Kim,et al.  Crossbar RRAM Arrays: Selector Device Requirements During Read Operation , 2014, IEEE Transactions on Electron Devices.

[5]  U. Chung,et al.  Modeling for multilevel switching in oxide-based bipolar resistive memory , 2012, Nanotechnology.

[6]  Jiantao Zhou,et al.  Crossbar RRAM Arrays: Selector Device Requirements During Write Operation , 2014, IEEE Transactions on Electron Devices.

[7]  W. Lu,et al.  High-density Crossbar Arrays Based on a Si Memristive System , 2008 .

[8]  D. Ielmini,et al.  Complementary switching in metal oxides: Toward diode-less crossbar RRAMs , 2011, 2011 International Electron Devices Meeting.

[9]  Jordi Suñé,et al.  Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM , 2013, Scientific Reports.

[10]  Nigel A. Marks,et al.  Experimental and atomistic modeling study of ion irradiation damage in thin crystals of theTiO2polymorphs , 2008 .

[11]  刘明,et al.  Thermal crosstalk in 3-dimensional RRAM crossbar array , 2015 .

[12]  Chang Jung Kim,et al.  Physical electro-thermal model of resistive switching in bi-layered resistance-change memory , 2013, Scientific Reports.

[13]  Shimeng Yu,et al.  HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. , 2013, ACS nano.

[14]  Qi Liu,et al.  Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[15]  Sannian Song,et al.  Reduced Threshold Current in NbO2 Selector by Engineering Device Structure , 2014, IEEE Electron Device Letters.

[16]  C. Hwang,et al.  The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .

[17]  Seungmin Lee,et al.  Thermal conductivity of κ-Al2O3 and α-Al2O3 wear-resistant coatings , 1998 .

[18]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.

[19]  J. W. Thomas.  Numerical Partial Differential Equations: Finite Difference Methods , 1995 .

[20]  Doo Seok Jeong,et al.  A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View , 2014 .

[21]  Jing Guo,et al.  Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs , 2015, IEEE Transactions on Electron Devices.

[22]  D. Ielmini,et al.  Trade-off between data retention and reset in NiO RRAMS , 2010, 2010 IEEE International Reliability Physics Symposium.

[23]  Kp McKenna,et al.  Electronic and magnetic properties of the cation vacancy defect in m − HfO 2 , 2015 .

[24]  Shinhyun Choi,et al.  Comprehensive physical model of dynamic resistive switching in an oxide memristor. , 2014, ACS nano.

[25]  P. McIntyre,et al.  Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films , 2009, IEEE Electron Device Letters.

[26]  D. J. Attard,et al.  Experimental and Atomistic Modelling Study of Ion Irradiation Damage in Thin Crystals of the TiO 2 Polymorphs , 2008 .

[27]  R. Lukaszew,et al.  Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO 2 thin films , 2015, 1504.05954.

[28]  Su Liu,et al.  Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory , 2014 .

[29]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[30]  D. Ielmini,et al.  Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.

[31]  Shimeng Yu,et al.  Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) , 2011, IEEE Transactions on Electron Devices.

[32]  Wenchao Lu,et al.  Read Challenges in Crossbar Memories With Nanoscale Bidirectional Diodes and ReRAM Devices , 2015, IEEE Transactions on Nanotechnology.

[33]  S. Ambrogio,et al.  Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches , 2014, IEEE Transactions on Electron Devices.

[34]  T. Heinzel,et al.  Dynamics of hydrogen sensing with Pt/TiO2 Schottky diodes , 2013 .

[35]  Lee,et al.  Thermal conductivity of sputtered oxide films. , 1995, Physical review. B, Condensed matter.

[36]  Yue Bai,et al.  Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory , 2014, Scientific reports.

[37]  Ru Huang,et al.  Encapsulation layer design and scalability in encapsulated vertical 3D RRAM , 2016, Nanotechnology.

[38]  Tuo-Hung Hou,et al.  Flexible One Diode--One Resistor Crossbar Resistive-Switching Memory , 2012 .

[39]  H-S Philip Wong,et al.  Memory leads the way to better computing. , 2015, Nature nanotechnology.

[40]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[41]  S. Long,et al.  An in-depth simulation study of thermal reset transitions in resistive switching memories , 2013 .

[42]  Jun Yeong Seok,et al.  Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model , 2010 .

[43]  Z. Ren.  Nanoscale MOSFETS: Physics, Simulation and Design , 2006 .

[44]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[45]  Shimeng Yu,et al.  Resistive Random Access Memory (RRAM) , 2016, Resistive Random Access Memory.

[46]  Steve S. Chung,et al.  Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling , 2016, 2016 IEEE Symposium on VLSI Technology.