Low-insertion-loss hybridp-i-n diode switches inKu andKa bands

A novel switch topology is proposed in which p-i-n diodes are embedded in a transformer network free of via holes. The topology is designed to achieve cancellation of diode parasitics and optimization of insertion loss. Prototypes for 15 and 29.75 GHz operation showing very good insertion loss (<0.5 dB) are presented. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 28–32, 2001.

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