Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling
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C. Radtke | I. Baumvol | I. Vickridge | F. Stedile | I. Trimaille | J. Ganem | S. Rigo
[1] Mark L. Green,et al. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits , 2001 .
[2] M. Iwami. Silicon carbide: fundamentals , 2001 .
[3] C. Radtke,et al. Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies , 2001 .
[4] A. O'Neill,et al. Recent progress and current issues in SiC semiconductor devices for power applications , 2001 .
[5] C. Raynaud. Silica films on silicon carbide: a review of electrical properties and device applications , 2001 .
[6] L. Johansson,et al. Interfacial investigation of in situ oxidation of 4H-SiC , 2001 .
[7] Qamar Ul Wahab,et al. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy , 2000 .
[8] N. Saks,et al. Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC , 2000 .
[9] I. Vickridge,et al. Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC , 2000 .
[10] L. Feldman,et al. Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures , 2000 .
[11] I. Baumvol. Atomic transport during growth of ultrathin dielectrics on silicon , 1999 .
[12] Y. Hwu,et al. SiO2/6H-SiC(0001)3×3 initial interface formation by Si overlayer oxidation , 1999 .
[13] V. Afanas’ev,et al. SiO2 as an insulator for SiC devices , 1997 .
[14] C. Pantano,et al. Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface , 1997 .
[15] A. Rys,et al. Modeling and Characterization of Thermally Oxidized 6H Silicon Carbide , 1995 .
[16] J. Halbritter,et al. ARXPS studies of SiO_2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces , 1994 .
[17] K. Luthra. Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride , 1991 .
[18] R. E. Tressler,et al. Oxidation of Single‐Crystal Silicon Carbide Part II . Kinetic Model , 1990 .
[19] G. Amsel,et al. SPACES: A PC implementation of the stochastic theory of energy loss for narrow-resonance depth profiling☆ , 1990 .
[20] H. Matsunami,et al. Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure , 1982 .
[21] A. S. Grove,et al. General Relationship for the Thermal Oxidation of Silicon , 1965 .