High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling

A high-speed and high-power InGaAsP semi-insulating buried crescent (SIBC) laser operating at 1.3-μm wavelength is described. The laser is fabricated with two epitaxial growth steps. A 3-dB direct modulation bandwidth of 11 GHz and a maximum cw output power of 42 mW have been achieved. A model based on rate equations is used to analyze these laser diodes. The effects of packaging and device parasitics on high-speed modulation are incorporated through a simple circuit configuration. The calculated frequency response is in good agreement with the measured response. The model is then used to predict the maximum obtainable modulation bandwidth. Finally, the measured relative intensity noise performance of the SIBC laser is presented.

[1]  J. A. Long,et al.  Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth , 1986 .

[2]  K. Kasahara,et al.  Planar surface buried-heterostructure InGaAsP/InP lasers with hydride VPE-grown Fe-doped highly resistive current-blocking layers , 1986 .

[3]  Niloy K. Dutta,et al.  InGaAsP laser with semi-insulating current confining layers , 1986 .

[4]  C. Burrus,et al.  Wide-Bandwidth and High-Power 1.3 µm InGaAsP Buried Crescent Lasers with Semi-Insulating Fe-doped InP Current Blocking Layers , 1987, Topical Meeting on Semiconductor Lasers.

[5]  Y. Sakakibara,et al.  InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength , 1984 .

[6]  Hiroshi Ishikawa,et al.  Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser , 1985 .

[7]  John E. Bowers,et al.  High-speed InGaAsP constricted-mesa lasers , 1986 .

[8]  K. Hess,et al.  Low‐threshold and wide‐bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layers , 1987 .

[9]  Wei Cheng,et al.  Semi-insulating InP grown by low pressure MOCVD , 1987 .

[10]  R. Linke.  Direct gigabit modulation of injection lasers - Structure-dependent speed limitations , 1984, Journal of Lightwave Technology.

[11]  Kenya Nakai,et al.  InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD , 1987 .

[12]  S. Forrest,et al.  Semi‐insulating properties of Fe‐implanted InP. I. Current‐limiting properties of n+‐semi‐insulating‐n+ structures , 1985 .