Memory materials and devices: From concept to application

[1]  Ru Huang,et al.  Investigation of NbOx-based volatile switching device with self-rectifying characteristics , 2019, Science China Information Sciences.

[2]  Jiewei Chen,et al.  2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor , 2019, Research.

[3]  Ru Huang,et al.  Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields , 2019, Science China Information Sciences.

[4]  Shimeng Yu,et al.  Optoelectronic resistive random access memory for neuromorphic vision sensors , 2019, Nature Nanotechnology.

[5]  Jan Siegel,et al.  Femtosecond x-ray diffraction reveals a liquid–liquid phase transition in phase-change materials , 2019, Science.

[6]  Wei Zhang,et al.  Catching structural transitions in liquids , 2019, Science.

[7]  T. Tseng,et al.  Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory , 2019, Advanced Electronic Materials.

[8]  Pulkit Jain,et al.  13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique , 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

[9]  David-Wei Zhang,et al.  Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures , 2019, Advanced materials.

[10]  Li Wang,et al.  Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer , 2018, 2018 Non-Volatile Memory Technology Symposium (NVMTS).

[11]  Tao Liu,et al.  Two-dimensional multibit optoelectronic memory with broadband spectrum distinction , 2018, Nature Communications.

[12]  Gang Wang,et al.  Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor. , 2018, ACS applied materials & interfaces.

[13]  R. Dittmann,et al.  Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules , 2018, Advanced materials.

[14]  Shimeng Yu,et al.  A Methodology to Improve Linearity of Analog RRAM for Neuromorphic Computing , 2018, 2018 IEEE Symposium on VLSI Technology.

[15]  Ru Huang,et al.  Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer , 2018, IEEE Electron Device Letters.

[16]  J. Yang,et al.  Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension , 2018, Nature Nanotechnology.

[17]  Chunsen Liu,et al.  A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.

[18]  Yang Chai,et al.  Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations , 2018 .

[19]  Dirk Wouters,et al.  Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices , 2018 .

[20]  Rainer Waser,et al.  Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx , 2018 .

[21]  Wei Zhang,et al.  Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing , 2017, Science.

[22]  Jan Reineke,et al.  Ascertaining Uncertainty for Efficient Exact Cache Analysis , 2017, CAV.

[23]  Shimeng Yu,et al.  Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer , 2017, IEEE Electron Device Letters.

[24]  Juwon Lee,et al.  Monolayer optical memory cells based on artificial trap-mediated charge storage and release , 2017, Nature Communications.

[25]  H. Hwang,et al.  Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application , 2017, IEEE Electron Device Letters.

[26]  R Waser,et al.  SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems , 2017, Nanotechnology.

[27]  S. van Dijken,et al.  Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3 , 2017, Nature Communications.

[28]  Ru Huang,et al.  Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering , 2017, Nanotechnology.

[29]  Tai-De Li,et al.  Van der Waals Force Isolation of Monolayer MoS2 , 2016, Advanced materials.

[30]  Xin Guo,et al.  Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices , 2016 .

[31]  Hyunsang Hwang,et al.  TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing , 2016, IEEE Electron Device Letters.

[32]  Zhiyong Fan,et al.  High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer , 2016, Advanced materials.

[33]  Ru Huang,et al.  Localized metal doping effect on switching behaviors of TaOx-based RRAM device , 2016, 2016 16th Non-Volatile Memory Technology Symposium (NVMTS).

[34]  Qi Liu,et al.  Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory , 2016, Advanced materials.

[35]  Seongjun Park,et al.  Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio , 2016, Nature Communications.

[36]  Songlin Feng,et al.  Direct observation of metastable face-centered cubic Sb2Te3 crystal , 2016, Nano Research.

[37]  Hua Zhang,et al.  Two-dimensional semiconductors for transistors , 2016 .

[38]  Ru Huang,et al.  Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing. , 2016, Nanoscale.

[39]  X. Duan,et al.  Van der Waals heterostructures and devices , 2016 .

[40]  H. Hwang,et al.  Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems , 2016, IEEE Electron Device Letters.

[41]  Ru Huang,et al.  Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si , 2016 .

[42]  Ru Huang,et al.  Encapsulation layer design and scalability in encapsulated vertical 3D RRAM , 2016, Nanotechnology.

[43]  I-Ting Wang,et al.  3D resistive RAM cell design for high-density storage class memory—a review , 2016, Science China Information Sciences.

[44]  H. Ohno,et al.  Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions. , 2016, Nano letters.

[45]  Ru Huang,et al.  Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation , 2016, Scientific Reports.

[46]  R. Dittmann,et al.  Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy. , 2016, ACS nano.

[47]  Y. Chih,et al.  1Kbit FinFET Dielectric (FIND) RRAM in pure 16nm FinFET CMOS logic process , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[48]  Xiangfan Xu,et al.  Nonvolatile Floating‐Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures , 2015 .

[49]  R. Yu,et al.  Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. , 2015, Chemical Society reviews.

[50]  Songlin Feng,et al.  Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material , 2015, Nature Communications.

[51]  Kaiyou Wang,et al.  Charge trap memory based on few-layer black phosphorus. , 2015, Nanoscale.

[52]  Wei Lu,et al.  Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor , 2015 .

[53]  I. Valov,et al.  Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices , 2015, Advanced materials.

[54]  Umesh Chand,et al.  Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer , 2015, IEEE Transactions on Electron Devices.

[55]  Hangbing Lv,et al.  Thermal crosstalk in 3-dimensional RRAM crossbar array , 2015, Scientific Reports.

[56]  Shimeng Yu,et al.  3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines , 2015, IEEE Transactions on Electron Devices.

[57]  E. Yalon,et al.  On the direction of the conductive filament growth in valence change memory devices during electroforming , 2015 .

[58]  Young Jae Kwon,et al.  Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash , 2015, Advanced materials.

[59]  Ryutaro Yasuhara,et al.  Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[60]  Lei Wang,et al.  Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. , 2015, Nature nanotechnology.

[61]  Geoffrey E. Hinton,et al.  Deep Learning , 2015, Nature.

[62]  J. Warner,et al.  All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures. , 2015, ACS nano.

[63]  H-S Philip Wong,et al.  Memory leads the way to better computing. , 2015, Nature nanotechnology.

[64]  Bo Li,et al.  Optoelectronic memory using two-dimensional materials. , 2015, Nano letters.

[65]  A Gholinia,et al.  Light-emitting diodes by band-structure engineering in van der Waals heterostructures. , 2014, Nature materials.

[66]  Tingting Guo,et al.  Impacts of Au-doping on the performance of Cu/HfO2/Pt RRAM devices , 2014 .

[67]  H. Hwang,et al.  Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM , 2014, IEEE Electron Device Letters.

[68]  Doo Seok Jeong,et al.  A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View , 2014 .

[69]  Rainer Waser,et al.  Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories , 2014 .

[70]  C. Zhang,et al.  Tunable charge-trap memory based on few-layer MoS2. , 2014, ACS nano.

[71]  Songlin Feng,et al.  One order of magnitude faster phase change at reduced power in Ti-Sb-Te , 2014, Nature Communications.

[72]  Paul R. Chalker,et al.  Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm , 2014, Materials.

[73]  Fengnian Xia,et al.  Strong light–matter coupling in two-dimensional atomic crystals , 2014, Nature Photonics.

[74]  Hyunsang Hwang,et al.  Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse , 2014, IEEE Transactions on Industrial Electronics.

[75]  F. Campabadal,et al.  Analysis of the Switching Variability in $\hbox{Ni/HfO}_{2}$-Based RRAM Devices , 2014, IEEE Transactions on Device and Materials Reliability.

[76]  T. Taniguchi,et al.  Photo-induced Doping in Graphene/Boron Nitride Heterostructures , 2014, 1402.4563.

[77]  M. Tsai,et al.  Ultra high density 3D via RRAM in pure 28nm CMOS process , 2013, 2013 IEEE International Electron Devices Meeting.

[78]  H. Hwang,et al.  Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode , 2013, 2013 IEEE International Electron Devices Meeting.

[79]  Matthew D. Pickett,et al.  Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2 , 2013, Advanced materials.

[80]  Arindam Ghosh,et al.  Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. , 2013, Nature nanotechnology.

[81]  Victor Yi-Qian Zhuo,et al.  Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer , 2013, IEEE Electron Device Letters.

[82]  H. Wong,et al.  Nanometer-Scale ${\rm HfO}_{x}$ RRAM , 2013 .

[83]  Lain‐Jong Li,et al.  Large-area synthesis of highly crystalline WSe(2) monolayers and device applications. , 2013, ACS nano.

[84]  Fei Zeng,et al.  Formation process of conducting filament in planar organic resistive memory , 2013 .

[85]  A. Kis,et al.  Nonvolatile memory cells based on MoS2/graphene heterostructures. , 2013, ACS nano.

[86]  An Chen,et al.  A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics , 2013, IEEE Transactions on Electron Devices.

[87]  P. Ajayan,et al.  Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. , 2013, Nano letters.

[88]  Shimeng Yu,et al.  HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. , 2013, ACS nano.

[89]  Qi Liu,et al.  In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory , 2013 .

[90]  L. Chu,et al.  Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. , 2012, ACS nano.

[91]  Hangbing Lv,et al.  Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device , 2012 .

[92]  S. Haigh,et al.  Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. , 2012, Nature nanotechnology.

[93]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[94]  L. Goux,et al.  Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM , 2012, IEEE Transactions on Electron Devices.

[95]  Yu-Lun Chueh,et al.  Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation , 2012, Nanoscale Research Letters.

[96]  H. Hwang,et al.  High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays. , 2012, ACS nano.

[97]  Ru Huang,et al.  A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application , 2012, IEEE Transactions on Electron Devices.

[98]  U-In Chung,et al.  Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[99]  K. Gopalakrishnan,et al.  Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[100]  Shimeng Yu,et al.  AlOx-Based Resistive Switching Device with Gradual Resistance Modulation for Neuromorphic Device Application , 2012, 2012 4th IEEE International Memory Workshop.

[101]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[102]  D. Strukov,et al.  Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors , 2012, Applied Physics A.

[103]  D. Ielmini,et al.  Phase change materials in non-volatile storage , 2011 .

[104]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[105]  Jianlin Liu,et al.  Graphene based nickel nanocrystal flash memory , 2011 .

[106]  H. Hwang,et al.  Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications , 2011, IEEE Electron Device Letters.

[107]  R. Stanley Williams,et al.  Current-controlled negative differential resistance due to Joule heating in TiO2 , 2011, 1108.3120.

[108]  Sang-jun Choi,et al.  In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory , 2011, Advanced materials.

[109]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[110]  Frederick T. Chen,et al.  Experimental investigation of the reliability issue of RRAM based on high resistance state conduction , 2011, Nanotechnology.

[111]  Shimeng Yu,et al.  An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation , 2011, IEEE Transactions on Electron Devices.

[112]  Heng-Yuan Lee,et al.  Resistance switching for RRAM applications , 2011, Science China Information Sciences.

[113]  T. Hou,et al.  Electrode dependence of filament formation in HfO2 resistive-switching memory , 2011 .

[114]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[115]  Siddharth Gaba,et al.  Synaptic behaviors and modeling of a metal oxide memristive device , 2011 .

[116]  J. Yang,et al.  High switching endurance in TaOx memristive devices , 2010 .

[117]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[118]  H. Ohno,et al.  A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. , 2010, Nature materials.

[119]  Ru Huang,et al.  Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering , 2010, IEEE Electron Device Letters.

[120]  K. Shepard,et al.  Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.

[121]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[122]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[123]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[124]  Shimeng Yu,et al.  Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers , 2010 .

[125]  Samuel Palermo,et al.  Optical I/O technology for tera-scale computing , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[126]  N. Peres The transport properties of graphene , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

[127]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[128]  Christopher Batten,et al.  Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics , 2009, IEEE Micro.

[129]  Rajkumar Buyya,et al.  Article in Press Future Generation Computer Systems ( ) – Future Generation Computer Systems Cloud Computing and Emerging It Platforms: Vision, Hype, and Reality for Delivering Computing as the 5th Utility , 2022 .

[130]  Pang-Shiu Chen,et al.  $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode , 2009, IEEE Electron Device Letters.

[131]  Frederick T. Chen,et al.  Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM , 2008, 2008 IEEE International Electron Devices Meeting.

[132]  Z. Wei,et al.  Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism , 2008, 2008 IEEE International Electron Devices Meeting.

[133]  H. Ohno,et al.  Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature , 2008 .

[134]  J. Kysar,et al.  Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene , 2008, Science.

[135]  Greg Atwood,et al.  Phase-Change Materials for Electronic Memories , 2008, Science.

[136]  A. Sawa Resistive switching in transition metal oxides , 2008 .

[137]  S. Elliott,et al.  Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.

[138]  G. I. Meijer,et al.  Who Wins the Nonvolatile Memory Race? , 2008, Science.

[139]  M. Nakayama,et al.  Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy , 2008 .

[140]  M. Wuttig,et al.  Phase-change materials for rewriteable data storage. , 2007, Nature materials.

[141]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[142]  F. Guinea,et al.  The electronic properties of graphene , 2007, Reviews of Modern Physics.

[143]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[144]  K. Tsunekawa,et al.  230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions , 2005, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

[145]  Matthias Wuttig,et al.  Towards a universal memory? , 2005, Nature materials.

[146]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3 , 2004, cond-mat/0411474.

[147]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[148]  J. Tominaga,et al.  Understanding the phase-change mechanism of rewritable optical media , 2004, Nature materials.

[149]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[150]  Eric R. Fossum,et al.  CMOS image sensors: electronic camera on a chip , 1995, Proceedings of International Electron Devices Meeting.

[151]  J. Moodera,et al.  Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.

[152]  T. Miyazaki,et al.  Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction , 1995 .

[153]  F.J. Leonberger,et al.  Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.

[154]  M. Julliere Tunneling between ferromagnetic films , 1975 .

[155]  J. W. Matthews,et al.  Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .

[156]  Masahide Matsumoto,et al.  A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology , 2014, IEEE Journal of Solid-State Circuits.

[157]  Hui Zhao,et al.  A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory , 2013, IEEE Journal of Solid-State Circuits.

[158]  L. Goux,et al.  Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM , 2013, IEEE Transactions on Electron Devices.

[159]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[160]  A. Geim,et al.  Atomically thin boron nitride : a tunnelling barrier for graphene devices , 2012 .

[161]  Seonghyun Kim,et al.  Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect , 2011, IEEE Electron Device Letters.

[162]  C. Lam,et al.  Phase change memory , 2011, Science China Information Sciences.

[163]  Frederick T. Chen,et al.  Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap , 2010, IEEE Electron Device Letters.

[164]  D. Ielmini,et al.  Phase change materials and their application to nonvolatile memories. , 2010, Chemical reviews.