论文信息 - Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction

Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction

The hysteretic resistance switching characteristics of Pt/Nb-doped STO Schottky junctions were investigated for nonvolatile memory applications. The Pt/single crystal Nb:STO Schottky junction exhibits excellent resistance switching characteristics such as stable pulse switching, uniform set/rest state and die-to-die uniformity. The switching mechanism might be explained by modulation of the Schottky tunnel barrier width by charging and discharging of electron in oxygen vacancy

Hyunsang Hwang | Hyunjun Sim | Man Chang | Dong-jun Seong

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