论文信息 - Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter

Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter

This letter presents the results of silicon selective epitaxial growth at 800 °C by ultralow pressure chemical vapor deposition using SiH4 /H2 assisted by H2 /Ar plasma sputter. By utilizing growth‐sputter cycles, selective epitaxial layers can be grown on exposed silicon windows of silicon wafers with oxide patterns to the thickness needed. The growth process was carried out by flowing SiH4 (3.5 mTorr)/H2 (7 mTorr), while the sputter step was performed by using H2 (7 mTorr)/Ar(1.5 mTorr) plasma at a susceptor dc bias from −100 to −300 V. Characterized by cross‐sectional transmission electron microscopy, Nomarski optical microscopy, and spreading resistance profiling, the epitaxial films were found of high structural and electrical quality.

Rafael Reif | R. Reif | T. Yew | Tri‐Rung Yew

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