Improvement of resistive switching properties in ZrO2- based ReRAM with implanted metal ions

In this letter, we fabricate Cu/ZrO2:Au/Pt and Cu/ZrO2:Ti/Pt devices via implanting Au or Ti ions. We systematic investigate the resistance switching properties of the two types of metal doped ZrO2-based resistance random access memory. Compared with the undoped (Cu/ZrO2/Pt) device, the metal doped devices show free-electroforming process, narrow distribution of the switching parameters and high device yield. The formation and rupture of conductive filaments with metal ions or oxygen vacancies are suggested to be responsible for the resistive switching phenomenon. The doped Au or Ti impurities influence the distribution and concentration of metal ions or oxygen vacancies in the ZrO2 crystal lattice, improving resistance switching properties of Zr2-based ReRAM.

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