A mathematical modelling approach for the large-signal performance prediction of microwave electron devices

A general-purpose mathematical model for microwave electron devices (e.g., MESFETs, bipolar transistors, diodes, etc.) is proposed. It is based on assumptions valid both for field effect and bipolar devices in typical large-signal operating conditions. Moreover, it can easily be identified through conventional measurements and is particularly suitable for nonlinear microwave circuit analysis based on harmonic balance techniques. The validation tests are carried out on a GaAs MESFET NEC NE71000, by means of simulations with an accurate equivalent circuit and comparisons with measured results. The results confirm the validity of the proposed approach.<<ETX>>