RHEED Studies of Heterojunction and Quantum Well Formation during MBE Growth - from Multiple Scattering to Band Offsets

Abstract The basic concepts and first-order growth model derived from the RHEED intensity oscillation technique are described and the limitations imposed by the experimentally demonstrated multiple-scattering nature of the diffraction process are indicated. Despite these restrictions the value of the technique is illustrated in relation to growth mechanism studies, heterojunction and quantum well interface formation and as a process control monitor.

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