Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

This book is devoted to fast the evolving field of modern material science and nanoelectronics, and more particularly to physics and technology of functional nanomaterials and devices. The book focuses on nanodevices for electronics, sensors, and energy harvesting, considering as main device structure—the semiconductor-on-insulator (SemOI) one. The book reports the recent achievements in this field from leading companies and universities in Europe, Russia, and Ukraine. It is articulated around four main topics: (1) Nanoscale CMOS materials and devices; (2) Beyond CMOS materials, devices and their diagnostics; (3) New functional nanomaterials and nanoscaled devices for energy harvesting, light emission, optoelectronics and THz range: (4) NanoSensors and MEMS/NEMS. Part I is focused on new SemOI materials for More Moore and More-than-Moore applications. Ultrathin silicon SOI structures are necessary for production of fully depleted SOI devices of the 22 nm technology node and beyond. The materials innovation for RF electronics, Si-based photonics, and 3D integration are presented. Device solutions for very low-energy computing, high-performed tunnel FETs, 3D nanowire RAM cells, and mechanical flexible CMOS devices on plastics are described. Part II of the Book deals with the physics of novel ‘‘beyond CMOS’’ devices such as IR memory cells on basis of Si/Ge nanoheterostructures, nonvolatile memory based on graphene on ferroelectric substrate, Si spintronic devices and the AFM diagnostics for different functional nanostructurated material and devices. In Part III, we focus on functional nanomaterials and structures regarding self-powered systems, solar energy harvesting structures, and THz electronics. Also nanocomposite dielectric materials for light-emitting materials and other optoelectronics applications are also discussed. Part IV considers the application of SemOI nanowire structures for radiation sensors, biosensors, chemical sensors, and MEMS. The use of SemOI substrates allows a considerable increase of the sensitivity of the sensors, as well as the fabrication of MEMS compatible with CMOS technology. Additionally, Si and SiC nanodot materials are considered as fluorescent markers in different biomedical applications. This book will be useful not only to specialists in nano, microelectronics, and functional nanomaterials but also to students and to the wider audience of readers who are interested by new directions in modern material science, electronics, and optoelectronics.

[1]  M. Strikha Modulation of mid-IR radiation by a gated graphene on ferroelectric substrate , 2011, 1111.2954.

[2]  D. N. Lobanov,et al.  Microscopic and optical investigation of Ge nanoislands on silicon substrates , 2002 .

[3]  K. Hinzer,et al.  Red-Emitting Semiconductor Quantum Dot Lasers , 1996, Science.

[4]  Makoto Itoh,et al.  Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfaces , 2001 .

[5]  Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review , 2012, 1207.0647.

[6]  D. N. Lobanov,et al.  Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − xGex buffer layers , 2012 .

[7]  S. Sarma,et al.  Electronic transport in two-dimensional graphene , 2010, 1003.4731.

[8]  Ya. E. Geguzin Ascending diffusion and the diffusion aftereffect , 1986 .

[9]  N. Ledentsov,et al.  Spontaneous ordering of arrays of coherent strained islands. , 1995, Physical review letters.

[10]  K. Yao,et al.  Graphene field-effect transistors with ferroelectric gating. , 2010, Physical review letters.

[11]  SUPARNA DUTTASINHA,et al.  Graphene: Status and Prospects , 2009, Science.

[12]  G. Salamo,et al.  Two-dimensional ordering of "In,Ga…As quantum dots in vertical multilayers grown on GaAs"100… and "n11… , 2007 .

[13]  J. Tersoff,et al.  Coarsening of Self-Assembled Ge Quantum Dots on Si(001) , 1998 .

[14]  F. Vasko,et al.  Carrier-induced modulation of radiation by a gated graphene , 2011, 1109.3868.

[15]  N. Peres,et al.  Fine Structure Constant Defines Visual Transparency of Graphene , 2008, Science.

[16]  Ploog,et al.  Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy , 2000, Physical review letters.

[17]  T. Nishinaga,et al.  Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication , 2001 .

[18]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[19]  Richard K. Leach,et al.  Fundamental Principles of Engineering Nanometrology , 2009 .

[20]  G. Salamo,et al.  Microsize defects in InGaAs/GaAs (N11)A/B multilayers quantum dot stacks , 2005 .

[21]  G. Salamo,et al.  Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100) , 2007 .

[22]  E. Kaldis Current Topics in Materials Science , 1980 .

[23]  A. Rappe,et al.  Stabilization of monodomain polarization in ultrathin PbTiO3 films. , 2006, Physical review letters.

[24]  K. Yao,et al.  Gate-controlled nonvolatile graphene-ferroelectric memory , 2009, 0904.1326.

[25]  I. Krestnikov,et al.  Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix , 1998 .

[26]  Michael T. Postek,et al.  Experimental test of blind tip reconstruction for scanning probe microscopy , 2000 .

[27]  P. Markiewicz,et al.  Atomic force microscope tip deconvolution using calibration arrays , 1995 .

[28]  Xiang Zhang,et al.  A graphene-based broadband optical modulator , 2011, Nature.

[29]  Graphene: materials in the Flatland , 2011 .

[30]  H. Liu,et al.  Quantum dot infrared photodetectors , 2003 .

[31]  G. Salamo,et al.  Fabrication of (In,Ga)As quantum-dot chains on GaAs(100) , 2004 .

[32]  O. Kuznetsov,et al.  Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure , 2005 .

[33]  Stefano Piccarolo,et al.  Some experimental issues of AFM tip blind estimation: the effect of noise and resolution , 2006 .

[34]  Akira Ohtomo,et al.  Artificial charge-modulationin atomic-scale perovskite titanate superlattices , 2002, Nature.

[35]  T. Sugaya,et al.  Improved optical properties of InAs quantum dots grown with an As2 source using molecular beam epitaxy , 2006 .

[36]  V. Ustinov,et al.  Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots , 2005 .

[37]  S. O. Ferreira,et al.  AFM characterization of PbTe quantum dots grown by molecular beam epitaxy under Volmer–Weber mode , 2001 .

[38]  Yihong Wu,et al.  Hysteresis of electronic transport in graphene transistors. , 2010, ACS nano.

[39]  A. Morozovska,et al.  Rival Mechanisms of Hysteresis in the Resistivity of Graphene Channel , 2013 .

[40]  High-resolution nanowire atomic force microscope probe grownby a field-emission induced process , 2004 .

[41]  X. Hong,et al.  Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3 , 2010, 1007.1240.

[42]  C. Raman The fundamentals of crystal physics , 1943 .

[43]  P. Petroff,et al.  Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors , 1998 .

[44]  M. Strikha,et al.  Antihysteresis of the electrical resistivity of graphene on a ferroelectric Pb(ZrxTi1 − x)O3 substrate , 2013 .

[45]  Noël Bonnet,et al.  A mathematical morphology approach to image formation and image restoration in scanning tunnelling and atomic force microscopies , 1994 .

[46]  N. Setter,et al.  Long-term retention in organic ferroelectric-graphene memories , 2012 .

[47]  S. Banerjee,et al.  Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric , 2009, 0901.2901.

[48]  V. Strelchuk,et al.  Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition , 2008, Nanotechnology.

[49]  R. Birge,et al.  Ultrasharp and high aspect ratio carbon nanotube atomic force microscopy probes for enhanced surface potential imaging , 2008, Nanotechnology.

[50]  Kristian M. Groom,et al.  Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers , 2007 .

[51]  F. Vasko,et al.  Electro-optics of graphene: Field-modulated reflection and birefringence , 2009, 0912.0851.

[52]  Joe C. Campbell,et al.  Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection , 2002 .

[53]  A. V. Novikov,et al.  Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer , 2005 .

[54]  G. Salamo,et al.  Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes , 2004 .

[55]  Peter Kratzer,et al.  Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces , 1999 .

[56]  Kang L. Wang,et al.  Robust bi-stable memory operation in single-layer graphene ferroelectric memory , 2011 .

[57]  W. Morgenroth,et al.  Downwards to metrology in nanoscale: determination of the AFM tip shape with well-known sharp-edged calibration structures , 2003 .

[58]  D. N. Lobanov,et al.  The elastic strain and composition of self-assembled GeSi islands on Si(001) , 2000 .

[59]  J. Castle,et al.  Characterization of surface topography by SEM and SFM: problems and solutions , 1997 .

[60]  Zhenhua Ni,et al.  Broadband graphene polarizer , 2011 .

[61]  John S. Villarrubia Tip and Surface Reconstruction in Scanned Probe Microscopy , 1997 .

[62]  Yoshinobu Okano,et al.  Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells , 2012 .

[63]  Integrating functional oxides with graphene , 2012, 1204.5161.

[64]  Ludger Koenders,et al.  Nanoscale Calibration Standards and Methods: Dimensional and Related Measurements in the Micro and Nanometer Range , 2005 .

[65]  V. Strelchuk,et al.  Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100) , 2004 .

[66]  F. Vasko Saturation of interband absorption in graphene , 2010, 1010.2392.

[67]  M. Strikha Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(ZrxTi1 − x)O3 ferroelectric substrate , 2012 .

[68]  D. Keller Reconstruction of STM and AFM images distorted by finite-size tips , 1991 .

[69]  Wei Ph. D. Gao Precision Nanometrology: Sensors and Measuring Systems for Nanomanufacturing , 2010 .

[70]  N. Peres,et al.  Colloquium: The transport properties of graphene: An introduction , 2010, 1007.2849.

[71]  A. Holmes,et al.  Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots , 2004 .

[72]  N. Ledentsov,et al.  Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands , 1998 .

[73]  D. N. Lobanov,et al.  Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers , 2010 .

[74]  Jong-Hyun Ahn,et al.  Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics , 2011, 1101.1347.

[75]  G. Salamo,et al.  On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules , 2009 .

[76]  R. Jain,et al.  Some investigations on oval defects in MBE-grown GaAs , 1992 .

[77]  M. Potemski,et al.  Dirac electronic states in graphene systems: optical spectroscopy studies , 2010, 1004.2949.