Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes

Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic random access memories (DRAMs). Soft error susceptibility in DRAMs as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n/sup +/p junctions with various barrier well structures has been compared with that with a conventional well in a p/sup -/ epitaxial layer on a p/sup +/ substrate.

[1]  E. L. Petersen.  Nuclear Reactions in Semiconductors , 1980, IEEE Transactions on Nuclear Science.

[2]  Soft-error study of DRAMs using nuclear microprobe , 1993, 31st Annual Proceedings Reliability Physics 1993.

[3]  Hiroshi Kimura,et al.  New method for soft-error mapping in dynamic random access memory using nuclear microprobe , 1992 .

[4]  N.C.C. Lu,et al.  A new failure mode of radiation-induced soft errors in dynamic memories , 1988, IEEE Electron Device Letters.

[5]  Tomihiro Kamiya,et al.  Single-event current transients induced by high energy ion microbeams , 1993 .

[6]  M. Koyanagi,et al.  Novel high density, stacked capacitor MOS RAM , 1978, 1978 International Electron Devices Meeting.

[7]  Barney Lee Doyle,et al.  Nuclear microprobe imaging of single-event upsets , 1992 .

[8]  P. S. Winokur,et al.  Three-dimensional simulation of charge collection and multiple-bit upset in Si devices , 1994 .

[9]  H. Sayama,et al.  Soft error immunity in a DRAM investigated by nuclear microprobes , 1993 .

[10]  T. May,et al.  Alpha-particle-induced soft errors in dynamic memories , 1979, IEEE Transactions on Electron Devices.

[11]  T. J. O'Gorman.  The effect of cosmic rays on the soft error rate of a DRAM at ground level , 1994 .

[12]  R. R. O'Brien,et al.  A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices , 1981, IEEE Electron Device Letters.

[13]  Hideto Hidaka,et al.  An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology , 1994 .

[14]  T. Ozaki,et al.  Light Ion Beam Transport in a Multi-Plasma Channel System , 1983 .

[15]  A. B. Campbell,et al.  Investigation of soft upsets in MOS memories with a microbeam , 1981 .

[16]  A. B. Campbell,et al.  Proton-Induced Single Event Upsets in NMOS Microprocessors , 1982, IEEE Transactions on Nuclear Science.

[17]  Kazuyasu Fujishima,et al.  MeV-Boron Implanted Buried Barrier for Soft Error Reduction in Megabit DRAM , 1987 .

[18]  Yoichi Akasaka,et al.  High-energy ion implantation for ULSI , 1991 .

[19]  M. Takai.  Nuclear microprobe application in semiconductor process developments , 1992 .

[20]  H. Sayama,et al.  Soft error susceptibility mapping of DRAMs using a high-energy nuclear microprobe , 1993 .

[21]  R. Harboe-Sørensen,et al.  Heavy ion microscopy of single event upsets in CMOS SRAMs , 1994 .

[22]  Direct measurement and improvement of local soft error susceptibility in dynamic random access memories , 1995 .

[23]  K. M. Horn,et al.  Ion beam induced charge collection (IBICC) microscopy of ICs: relation to single event upsets (SEU) , 1993 .

[24]  K. Jenkins,et al.  Ion microbeam probing of sense amplifiers to analyze single event upsets in a CMOS DRAM , 1991 .

[25]  K. Sonoda,et al.  Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation , 1993 .

[26]  R. K. Lawrence,et al.  Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .

[28]  A.M. Mohsen,et al.  Alpha-particle-induced charge collection measurements and the effectiveness of a novel p-well protection barrier on VLSI memories , 1985, IEEE Transactions on Electron Devices.

[29]  Charge collection and soft error in DRAMs investigated using 400 keV proton microprobe , 1994 .

[30]  M. Takai.  Applications of nuclear microprobes to semiconductor process developments , 1995 .

[31]  Soft-error evaluation using proton microprobe for DRAMs , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[32]  T. Kure,et al.  A corrugated capacitor cell (CCC) for megabit dynamic MOS memories , 1983, IEEE Electron Device Letters.