论文信息 - Crystal growth using the heat exchanger method (HEM)

Crystal growth using the heat exchanger method (HEM)

Abstract The progress of the liquid-solid interface during crystal growth of sapphire and spinel using the heat exchanger method (HEM) has been studied and related to processing parameters. Crystal growth has thus been optimized to produce crystals with 95–100% of the material free of voids and scattering centers.

F. Schmid | D. Viechnicki | F. Schmid | D. Viechnicki

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