论文信息 - Spatial distribution of excess carriers in electron-beam excited semiconductors

Spatial distribution of excess carriers in electron-beam excited semiconductors

The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.

D. Kyser | D. B. Wittry

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