论文信息 - The behavior of powder sublimation in the long-term PVT growth of SiC crystals - 字舞流文

The behavior of powder sublimation in the long-term PVT growth of SiC crystals

Lixin Song | E. Shi | Zhizhan Chen | Xi Liu | Boyun Chen

[1] Lixin Song,et al. Effects of graphitization of the crucible on silicon carbide crystal growth , 2008 .

[2] Lili Zheng,et al. Effect of thermal environment evolution on AlN bulk sublimation crystal growth , 2007 .

[3] Hui Zhang,et al. Increase of SiC sublimation growth rate by optimizing of powder packaging , 2007 .

[4] Y. Makarov,et al. In situ visualization of SiC physical vapor transport crystal growth , 2005 .

[5] Y. Makarov,et al. Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth , 2004 .

[6] F. Durst,et al. Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling , 2003 .

[7] S. Ha,et al. Integrated process modeling and experimental validation of silicon carbide sublimation growth , 2003 .

[8] M. Dudley,et al. Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide , 2002 .

[9] A. Winnacker,et al. Impact of source material on silicon carbide vapor transport growth process , 2001 .

[10] Y. Makarov,et al. Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals , 2001 .