论文信息 - Surface potential equation for bulk MOSFET

Surface potential equation for bulk MOSFET

The physical background of the commonly used approximate MOSFET surface potential equation is explained by comparison with the exact result. A new well-conditioned surface potential equation over the extended temperature range essential for cryogenic CMOS applications is obtained by explicitly accounting for incomplete impurity ionization simultaneously with the imref splitting present in MOS transistors.

[1] C. Sah,et al. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[2] M. Saeys,et al. Surface-potential solutions to the Pao Sah voltage equation , 2006 .

[3] P. V. Gray,et al. Si ‐ SiO2 Fast Interface State Measurements , 1968 .

[4] Weimin Wu,et al. Physics-based mathematical conditioning of the MOSFET surface potential equation , 2004, IEEE Transactions on Electron Devices.

[5] C. C. McAndrew,et al. Accuracy of approximations in MOSFET charge models , 2002 .

[6] G. Gildenblat,et al. Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K , 1990 .

[7] Richard C. Jaeger,et al. Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulation☆ , 1979 .

[8] G. Gildenblat,et al. PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[9] P. V. Gray,et al. FREEZE‐OUT CHARACTERISTICS OF THE MOS VARACTOR , 1968 .

[10] G. Gildenblat,et al. Investigation of cryogenic CMOS performance , 1985, 1985 International Electron Devices Meeting.