Power density comparative analysis concerning to three transistor technologies applied to a CCM PFC BOOST converter using optimization techniques

A transistor technology comparative analysis applied to a CCM PFC BOOST converter, aiming to identify the technology that shows the highest volumetric power density for a particular application is discussed. For this analysis, a comparison among three different transistors technologies namely traditional MOSFET, CoolMOSC3 and CoolMOSCP is performed. The calculation of the transistors losses and its heat transfer system are discussed. An analysis of different operation points (Δi @ fs) is performed, pointing the optimum point for the maximum power density for each transistor technology. From these derivative points the comparisons are done. The power diode and the magnetic material utilized for the Boost inductor and EMI filter cores are the same for all three designs.

[1]  D. Makowski,et al.  Improvement Of PFC Boost Converter Energy Performance Using Silicon Carbide Diode , 2006, Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006..

[2]  Helio Leaes Hey,et al.  An improved ZCS-PWM commutation cell for IGBT's application , 1999 .

[3]  T. Stuart,et al.  A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching , 1992, [Proceedings] APEC '92 Seventh Annual Applied Power Electronics Conference and Exposition.

[4]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[5]  Helio Leaes Hey,et al.  An improved ZCS-PWM commutation cell for IGBT's applications , 1997, Proceedings of APEC 97 - Applied Power Electronics Conference.

[6]  Z.J. Shen,et al.  New Physical Insights on Power MOSFET Switching Losses , 2009, IEEE Transactions on Power Electronics.

[7]  J. R. Pinheiro,et al.  A static converter comparative study taking into account semiconductor tecnologies and swicth auxiliary circuits: Optimized design , 2011, XI Brazilian Power Electronics Conference.

[8]  G. Deboy,et al.  Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[9]  Cassiano Rech,et al.  Comparison of Neutral-Point-Clamped, Symmetrical, and Hybrid Asymmetrical Multilevel Inverters , 2010, IEEE Transactions on Industrial Electronics.

[10]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[11]  T. Chow,et al.  A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[12]  L. Lorenz.  New power semiconductor components for AC/DC power supply applications , 2003, The 25th International Telecommunications Energy Conference, 2003. INTELEC '03..

[13]  Jose Renes Pinheiro,et al.  An optimum design of PFC Boost Converters , 2009, 2009 13th European Conference on Power Electronics and Applications.