Wafer-scale packaging of RF MEMS for 50-90 GHz

An RF MEMS capacitive membrane switch with interconnects and bonding surfaces for wafer-scale packaging is demonstrated for 50-90 GHz with un-bonded cap wafers

[1]  K. Najafi,et al.  A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding , 2001 .

[2]  D. Peroulis,et al.  Silicon micromachined interconnects for on-wafer packaging of MEMS devices , 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

[3]  A. Jourdain,et al.  Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[4]  M. Tentzeris,et al.  Design and On-Wafer Measurement of a W-Band Via-Less CPW RF Probe Pad to Microstrip Transition , 2003, 2003 33rd European Microwave Conference, 2003.

[5]  Gabriel M. Rebeiz,et al.  Dc-50 GHz low-loss wafer-scale package for RF MEMS , 2004, 34th European Microwave Conference, 2004..

[6]  Morton,et al.  Wide-band finite ground coplanar (FGC) interconnects for on-chip packaging of RF MEMS switches used in smart antennas and phased arrays , 2004, IEEE Antennas and Wireless Propagation Letters.