Oxidation of HF-treated Si wafer surfaces in air

The change in the chemical surface state of polished Si wafers [p‐type, (100) oriented] during storage in air at room temperature was investigated for storage times up to half a year. Measurements were performed by x‐ray Photoelectron Spectroscopy (XPS) and High Resolution Electron Energy Loss Spectroscopy (HREELS). Immediately after the HF treatment (1 min 5% HF, 2 min water rinse) vibrational spectroscopy (HREELS) shows a predominant coverage of the surface with hydride groups (80%–90% of a ML), which can be inferred from the presence of the stretching (2100 cm−1), scissor (900 cm−1) and bending (640 cm−1) vibrations in the spectra. A slight additional coverage with oxygen is proved by XPS and originates from Si‐OH groups (3670 cm−1) and oxygen‐related hydrocarbon groups (XPS). These Si‐OH groups result from an exchange reaction of Si‐F with water during the two‐minute water rinse. The development of an oxygen coverage during subsequent storage in air occurs extremely slowly and shows a logarithmic beha...

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