A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications

The analysis and design of an inductorless, resistive feedback low noise amplifier using advanced SiGe HBT technology, for application in UWB systems is presented. Measurements show 20 dB of gain with 1 dB variation over the 3 GHz to 10 GHz band, and a matched input and output with less than -10 dB of reflection. A minimum noise figure is 3.05 dB at 3 GHz and increases to 4.5 dB at 10 GHz. All these results are comparable to that of conventional LNAs with an emitter degenerated inductor, but this resistive feedback LNA has the advantage of die area over previous wideband LNAs due to the lack of a spiral inductor. Simple analytical design expressions are given for wideband LNA design and are verified using simulation and measurements. The measured input IP3 is -11.75 dBm with 17 mA total current consumption from 2.5 V supply.

[1]  Chinchun Meng,et al.  Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops , 2002 .

[2]  A. Ismail,et al.  A 3 to 10 GHz LNA using a wideband LC-ladder matching network , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[3]  Jongsoo Lee,et al.  Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology , 2006, IEEE Transactions on Microwave Theory and Techniques.

[4]  A. Bevilacqua,et al.  An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[5]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .