Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
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M. Furuta | T. Nabatame | M. Uenuma | Y. Nakashima | M. Kimura | T. Imai | T. Matsuda | R. Tanaka | D. Koretomo | Y. Magari | Ayata Kurasaki | Sumio Sugisaki