Signal and Noise Characteristics Induced by Unattenuated X Rays from a Scintillator in Indirect-Conversion CMOS Photodiode Array Detectors

We report the measurement results of signal and noise characteristics induced by the direct x-rays in an indirect-conversion CMOS photodiode array detector. In order to isolate the signal and noise due to the direct x-rays from those due to the optical photons, we inserted a light-absorbing blackout material between a phosphor screen and the photodiode array. From the images irradiated with and without the blackout paper, the signal and noise characteristics due to the optical photons emitted from a phosphor screen were estimated. For the analysis of the measurements, we have developed a model describing the signal and noise transfers based on the cascaded linear-systems approach. The measured results show the direct x-ray is very harmful to the detector performances, such noise power spectrum (NPS) and signal-to-noise ratio (SNR). However, from the theoretical estimation, the degradation of NPS and SNR would not be due to the directly absorbed x-ray photons, but we believe that other sources, such as Compton and photoelectric scattered rays from a scintillator, a photodiode passivation layer or bulk substrate, are main causes.