EKV Transistor Model For Ultra Low-Voltage Bulk-Driven Circuits

This paper contains a description of EKV transistor model properties and its application in ultra low-voltage and/or low-power integrated circuit design. We also discuss and investigate the suitability of the model for rather unconventional bulk-driven approach to circuit design. Moreover, a modified EKV model v2.6 parameter extraction sequence is proposed, where deeper understanding of the model itself and better overall correlation between the measured data and simulation results is introduced. The obtained knowledge about the extended extraction procedure has been directly incorporated into the curriculum of IC design-related classes and student projects, since modeling and simulation belong to the key education activities in microelectronics field.

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