GTO thyristor modelling using SABER

This paper demonstrates the use of an equivalent circuit model for simulation of the gate turn off (GTO) thyristor, which is commonly used in high power electronic circuits, and its implementation in the SABER simulator. The model consists of three basic sub circuit elements; voltage and current controlled current sources and charge storage elements, all of which exhibit very nonlinear behavioural characteristics. However, these are successfully simulated using the equation solving algorithms available within SABER, unlike some SPICE based simulators where source code alterations are necessary. An introduction to the GTO device is given, followed by a description of the model and its operation, information regarding its implementation in the SABER simulator is explained, and a comparison of simulated and experimental results is made.