BiMOS and SMOSC structures for MOS parameter measurement

Abstract Measurements of gate oxide stability in MOS VLSI development and manufacturing using substrate injection on two test structures are reviewed: the d.c. substrate injection via bipolar injector-MOS transistor (BiMOS) and the pulsed a.c. substrate injection via sourced-MOS capacitors (SMOSC). These techniques overcome the limitations of the MOS capacitor (MOSC) technique in measuring the fundamental dependencies of oxide trap charging and generation on the oxide electric field. They allow independent control of the oxide electric field, gate injection current, and electron energy. Application examples are described.

[1]  C. Sah,et al.  New experimental method for extracting the density and generation annealing rates of interface and oxide traps , 1986 .

[2]  A. Goetzberger,et al.  TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORS , 1966 .

[3]  Tak H. Ning,et al.  Thermal reemission of trapped electrons in SiO2 , 1978 .

[4]  Y. Nissan-Cohen,et al.  Trap generation and occupation dynamics in SiO2 under charge injection stress , 1986 .

[5]  Arnold Reisman,et al.  The distribution of radiation‐induced charged defects and neutral electron traps in SiO2, and the threshold voltage shift dependence on oxide thickness , 1990 .

[6]  Toshikazu Nishida,et al.  Observation of threshold oxide electric field for trap generation in oxide films on silicon , 1988 .

[7]  D. Frohman-Bentchkowsky,et al.  Dynamic model of trapping‐detrapping in SiO2 , 1985 .

[8]  R.H. Dennard,et al.  1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints , 1979, IEEE Transactions on Electron Devices.

[9]  B. Eitan,et al.  Current induced trap generation in SiO2 , 1982 .

[10]  B. Eitan,et al.  Electron trapping in SiO2—An injection mode dependent phenomenon , 1982 .

[11]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[12]  C. Sah.  Electronic Processes and Excess Currents in Gold-Doped Narrow Silicon Junctions , 1961 .

[13]  L. Terman.  An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .

[14]  Tak H. Ning,et al.  Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[15]  J. F. Verwey,et al.  Nonavalanche injection of hot carriers into SiO2 , 1973 .

[16]  Paul M. Solomon,et al.  Direct measurement of the energy distribution of hot electrons in silicon dioxide , 1985 .

[17]  Scott E. Thompson,et al.  Tunneling and thermal emission of electrons from a distribution of shallow traps in SiO2 , 1991 .

[18]  Y. Nissan-Cohen,et al.  High field current induced‐positive charge transients in SiO2 , 1983 .

[19]  Chih-Tang Sah,et al.  Models and experiments on degradation of oxidized silicon , 1987 .

[20]  M. Lenzlinger,et al.  Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[21]  D. Dimaria,et al.  Temperature dependence of trap creation in silicon dioxide , 1990 .

[22]  Chih-Tang Sah,et al.  Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection , 1983 .

[23]  Massimo V. Fischetti,et al.  Electron heating studies in silicon dioxide: Low fields and thick films , 1986 .

[24]  Scott E. Thompson,et al.  Oxide field and thickness dependence of trap generation in 9–30 nm dry and dry/wet/dry oxides , 1991 .

[25]  Y. Nissan-Cohen,et al.  High‐field and current‐induced positive charge in thermal SiO2 layers , 1985 .

[26]  A. S. Grove,et al.  Ion Transport Phenomena in Insulating Films , 1965 .

[27]  Douglas A. Buchanan,et al.  Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors , 1990 .

[28]  Z. Weinberg,et al.  Tunneling of electrons from Si into thermally grown SiO2 , 1977 .

[29]  D. Dimaria,et al.  Correlation of trap creation with electron heating in silicon dioxide , 1987 .

[30]  T. Ning,et al.  Optically induced injection of hot electrons into SiO2 , 1974 .

[31]  Thomas N. Theis,et al.  Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films , 1985 .

[32]  Sah Chih-Tang.  Evolution of the MOS transistor-from conception to VLSI , 1988, Proc. IEEE.

[33]  E. Tannenbaum,et al.  Stabilization of silicon surfaces by thermally grown oxides , 1959 .

[34]  C. Sah,et al.  Hydrogenation and annealing kinetics of group‐III acceptors in oxidized silicon , 1985 .

[35]  Tierney,et al.  Direct observation of the threshold for electron heating in silicon dioxide. , 1986, Physical review letters.

[36]  Fischetti.  Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.

[37]  Chih-Tang Sah,et al.  The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centers , 1967 .