论文信息 - Photoluminescence of Zn‐implanted GaN

Photoluminescence of Zn‐implanted GaN

The photoluminescence spectrum of Zn‐implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range 1–20×1018 Zn/cm3.

J. Hutchby | J. Pankove

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