论文信息 - Epitaxial Silicide Formation by Scanning Electron Beam Annealing - 字舞流文

Epitaxial Silicide Formation by Scanning Electron Beam Annealing

H. Ishiwara | H. Yamamoto

[1] S. T. Picraux,et al. Microsecond time‐scale Si regrowth using a line‐source electron beam , 1981 .

[2] T. Sigmon,et al. Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams , 1981 .

[3] H. Ishiwara,et al. Single Crystalline Silicide Formation , 1981 .

[4] H. Ishiwara,et al. Ion-beam-induced epitaxy in the Pd/Si system , 1980 .

[5] J. Poate,et al. Silicon/metal silicide heterostructures grown by molecular beam epitaxy , 1980 .

[6] H. Ishiwara,et al. Double heteroepitaxy in the Si (111)/CoSi2/Si structure , 1980 .

[7] J. Gibbons,et al. Calculation of solid‐phase reaction rates induced by a scanning cw laser , 1980 .

[8] Melvin Lax,et al. Temperature rise induced by a laser beam II. The nonlinear case , 1978 .