论文信息 - Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nm

Mobility Enhancement in Uniaxially Strained (110) Oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of Less Than 4 nm

Mobility in single-gate (SG) and double-gate (DG) ultra-thin body (UTB) SOI MOSFETs under uniaxial tensile stress has been systematically examined. Mobility enhancement in both UTB nMOSFETs and pMOSFETs by stress is experimentally demonstrated for the first time. The enhancement in UTB nMOSFETs is larger than the prediction by theory. The mobility enhancement by stress in DG UTB nMOSFETs and pMOSFETs is also observed. The enhancement may originate from not only the subband energy shift but effective mass change.

T. Hiramoto | K. Shimizu

[1] S. Thompson,et al. Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel Stress , 2007, IEEE Electron Device Letters.

[2] T. Hiramoto,et al. Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs , 2005, IEEE Electron Device Letters.