论文信息 - A 120-GHz microstrip antenna monolithically integrated with a photodiode on Si

A 120-GHz microstrip antenna monolithically integrated with a photodiode on Si

A 120-GHz microstrip antenna monolithically integrated with a photodiode that has been developed for a photonic millimeter-wave emitter is described. A photodiode and a ground plane are placed on a Si substrate, and an antenna is placed on a thick polyimide layer that is formed on the Si substrate. This structure simplifies the fabrication process and enables the use of a back-illuminated photodiode. The use of the thick polyimide layer increases the bandwidth of the antenna and improves the radiation efficiency. By integrating a uni-traveling carrier photodiode with the antenna, we are able to experimentally demonstrate the emission of millimeter-wave signals with a power of 0.1 mW at a frequency of 120 GHz.

Tadao Nagatsuma | Tadashi Minotani | Akihiko Hirata

[1] T. Ishibashi,et al. Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance , 1998 .