Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

Abstract The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge–Sb–Te compound system to reversibly change its phase between two stable states, namely the poly-crystalline low-resistive state and the amorphous high-resistive state, allowing the storage of the logical bit. A careful study of the phase-change material properties in terms of the set operation performance, the program window and the electrical switching parameters as a function of composition is very attractive in order to enlarge the possible PCM application spectrum. Concerning the set performance, a crystallization kinetics based interpretation of the observed behavior measured on different Ge–Sb–Te compounds is provided, allowing a physics-based comprehension of the reset-to-set transition.

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