600 V single-chip power conversion system based on thin layer silicon-on-insulator

Summary form only given. An integrated 600 V power conversion circuit is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A modular process flow provides for the integration of half-bridge power stages along with level shifting and lowand medium-voltage control. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, etc., and is a significant development for the integration of power conversion systems.