论文信息 - Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors - 字舞流文

Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

G. Döhler | L. Frey | A. Bauer | T. Erlbacher | J. Graf | Theresa Lutz | H. Schwarzmann | F. H. Guillén | M. Schreivogel | R. Fix