New Results With Silicon Drift Detectors For X-ray Spectroscopy
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Silicon Drift Detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30 OC, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined
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