High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits

The integration of dissimilar materials is of great interest to enable silicon photonics and enable optical interconnects in future microprocessors. The wavelength transparency of Si in the telecom window 1.3–1.6 m is another compelling reason to integrate microphotonics and microelectronics. A major challenge for this integration is the incompatibility of the III–V compound and Si semiconductors used to implement microphotonics and microelectronics, respectively. Si and InP have an 8.1% lattice mismatch, making heteroepitaxial growth of InGaAsP compounds on Si with low misfit dislocation density difficult. 1

[1]  J. Bowers,et al.  Electrically pumped hybrid AlGaInAs-silicon evanescent laser. , 2006, Optics express.

[2]  Di Liang,et al.  Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits , 2008 .

[3]  Hyundai Park,et al.  A Hybrid AlGaInAs–Silicon Evanescent Amplifier , 2007, IEEE Photonics Technology Letters.

[4]  John Bowers,et al.  Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells. , 2005, Optics express.

[5]  John E. Bowers,et al.  Integrated AlGaInAs-silicon evanescent race track laser and photodetector. , 2007 .

[6]  U. Gosele,et al.  Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment , 1988 .

[7]  Manfred Reiche,et al.  Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas , 2002 .

[8]  W. Maszara,et al.  Bonding of silicon wafers for silicon‐on‐insulator , 1988 .

[9]  W. Maszara.  Silicon‐On‐Insulator by Wafer Bonding: A Review , 1991 .

[10]  Omri Raday,et al.  A hybrid AlGaInAs-silicon evanescent waveguide photodetector. , 2007, Optics express.

[11]  Di Liang,et al.  Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate , 2008 .

[12]  H. Kawanami,et al.  Heteroepitaxial technologies of III-V on Si , 2001 .

[13]  Klas Hjort,et al.  Plasma-assisted InP-to-Si low temperature wafer bonding , 2002 .