论文信息 - Focused ion-beam assisted deposition of tungsten and carbon

Focused ion-beam assisted deposition of tungsten and carbon

The process of ion-beam assisted deposition of tungsten and carbon by gallium ions has been studied using Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The bulk composition of tungsten and organic deposits was found to be 70/14/15/1 W/Ga/C/O and 64.4/34/1/0.6 C/Ga/O/Si at.% respectively. The deposition of tungsten results in the formation of a stable silicide complex at the interfacial region. The process of carbon deposition occurs by free radical formation and covalent bonding of organic molecules to the surface.

[1] H. Morimoto,et al. Practical results of photomask repair using focused ion beam technology , 1988 .

[2] L. R. Harriott,et al. Focused ion beam stimulated deposition of organic compounds , 1989 .

[3] John Melngailis,et al. Focused ion beam induced deposition of gold , 1986 .

[4] K. Geib,et al. Reaction between SiC and W, Mo, and Ta at elevated temperatures , 1990 .

[5] S. Namba,et al. Microfabrication using focused ion beams , 1990 .

[6] P. Heard,et al. Repair of opaque defects in photomasks using focused ion beams , 1987 .

[7] S. Namba,et al. Maskless ion beam assisted deposition of W and Ta films , 1986 .

[8] P. Heard,et al. Focused ion beam deposition of carbon for photomask repair , 1990 .